Plasma-enhanced Chemical Vapor Deposition of silicon dioxide Optimizing dielectric films through plasma characterization
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منابع مشابه
Characterization of atomic layer deposition HfO2, Al2O3, and plasma- enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...
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Thin silicon dioxide films have been studied as a function of deposition parameters and annealing temperatures. Films were deposited by tetraethoxysilane (TEOS) dual-frequency plasma enhanced chemical vapor deposition with different time interval fractions of high-frequency and low-frequency plasma depositions. The samples were subsequently annealed up to 930 ◦C to investigate their stress beha...
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Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...
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In this study, the silicon dioxide was deposited on the silicon substrate by metal-organic based plasma enhanced chemical vapor deposition (PECVD) method at the low temperature. The metal-organic tetraethoxy-silane (TEOS) was used as a silicon precursor in liquid state. In addition, oxygen and argon were used as ambient gases. Effects of the working pressure and O2/TEOS pressure ratio on the ch...
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